GeO2/Ge structure submitted to annealing in deuterium : incorporation pathways and associated oxide modifications
Deuterium (D) incorporation in GeO2/Ge structures following D2 annealing was investigated. Higher D concentrations were obtained for GeO2/Ge samples in comparison to their SiO2/Si counterparts annealed in the same conditions. Oxygen vacancies produced during the annealing step in D2 constitute defec...
| Autores: | , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2014 |
| País: | Brasil |
| Institución: | Universidade Federal do Rio Grande do Sul (UFRGS) |
| Repositorio: | Repositório Institucional da UFRGS |
| Idioma: | inglés |
| OAI Identifier: | oai:www.lume.ufrgs.br:10183/142396 |
| Acceso en línea: | http://hdl.handle.net/10183/142396 |
| Access Level: | acceso abierto |
| Palabra clave: | Semicondutores elementares Estrutura química Dopagem de semicondutores Estequiometria Deuterio Germânio |
| Sumario: | Deuterium (D) incorporation in GeO2/Ge structures following D2 annealing was investigated. Higher D concentrations were obtained for GeO2/Ge samples in comparison to their SiO2/Si counterparts annealed in the same conditions. Oxygen vacancies produced during the annealing step in D2 constitute defect sites for D incorporation, analogous to defects at the SiO2/Si interfacial region. Besides D incorporation, volatilization of the oxide layer is also observed as a consequence of D2 annealing, especially in the high temperature regime of the present study (>450 C). In parallel to this volatilization, the stoichiometry and chemical structure of remnant oxide are modified as well. These results evidence the broader impact of forming gas annealing in dielectric/ Ge structures with respect to SiO2/Si counterparts. |
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