Static and dynamic magnetization investigation in permalloy electrodeposited onto high resistive N-type silicon substrates
The present study reports on the development of permalloy thin films obtained by electrodeposition onto low-doped n-type silicon substrates. While changing from non-percolated clusters into percolated thin films upon increasing the electrodeposition time, the static and dynamic magnetic properties o...
| Autores: | , , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2017 |
| País: | Brasil |
| Institución: | Universidade Federal de Viçosa (UFV) |
| Repositorio: | LOCUS Repositório Institucional da UFV |
| Idioma: | inglés |
| OAI Identifier: | oai:locus.ufv.br:123456789/17977 |
| Acceso en línea: | http://www.mdpi.com/2079-6412/7/2/33 http://www.locus.ufv.br/handle/123456789/17977 |
| Access Level: | acceso abierto |
| Palabra clave: | Electrodeposition Ferromagnetic resonance Vortex Spintronics |
| Sumario: | The present study reports on the development of permalloy thin films obtained by electrodeposition onto low-doped n-type silicon substrates. While changing from non-percolated clusters into percolated thin films upon increasing the electrodeposition time, the static and dynamic magnetic properties of the as-obtained structures were investigated. We found the experimental magnetic results to be in very good agreement with the simulations performed by solving the Landau-Lifshitz for the dynamics of the magnetic moment. For short electrodeposition times we found the static and dynamic magnetization behavior of the as-formed nanoclusters evidencing vortex magnetization with random chirality and polarization, which is explained in terms of dipolar interaction minimization. Indeed, it is herein emphasized that recent applications of ferromagnetic materials in silicon-based spintronic devices, such as logic and bipolar magnetic transistors and magnetic memories, have revived the possible utilization of low cost and simple electrodeposition techniques for the development of these upcoming hetero-nanostructured devices. |
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