Strain-inducing photochemical chlorination of graphene nanoribbons on SiC (0001)
As different low-dimensional materials are sought to be incorporated into microelectronic devices, graphene integration is dependent on the development of band gap opening strategies. Amidst the different methods currently investigated, application of strain and use of electronic quantum confinement...
| Autores: | , , , , , , , |
|---|---|
| Tipo de documento: | artigo |
| Estado: | Versão publicada |
| Data de publicação: | 2021 |
| País: | Brasil |
| Recursos: | Universidade Federal do Rio Grande do Sul (UFRGS) |
| Repositório: | Repositório Institucional da UFRGS |
| Idioma: | inglês |
| OAI Identifier: | oai:www.lume.ufrgs.br:10183/219698 |
| Acesso em linha: | http://hdl.handle.net/10183/219698 |
| Access Level: | Acceso aberto |
| Palavra-chave: | Grafeno Cloração fotoquímica Nanofitas Graphene Nanoribbons SiC Strain Chlorine XPS Raman |
| Resumo: | As different low-dimensional materials are sought to be incorporated into microelectronic devices, graphene integration is dependent on the development of band gap opening strategies. Amidst the different methods currently investigated, application of strain and use of electronic quantum confinement have shown promising results. In the present work, epitaxial graphene nanoribbons (GNR), formed by surface graphitization of SiC (0001) on crystalline step edges, were submitted to photochemical chlorination. The incorporation of Cl into the buffer layer underlying graphene increased the compressive uniaxial strain in the ribbons. Such method is a promising tool for tuning the band gap of GNRs. |
|---|