The enhanced n-butanol sensing performance of In2O3 loaded NiO cuboid heterostructure
Monitoring volatile organic compounds (VOCs) quickly and on-site is essential for preserving human health. The semiconductor gas sensor has been a promising strategy for detecting VOCs. However, stability, selectivity, and sensitivity are crucial for the practical application of a gas-sensor materia...
| Autores: | , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2023 |
| País: | Brasil |
| Institución: | Universidade Estadual Paulista (UNESP) |
| Repositorio: | Repositório Institucional da UNESP |
| Idioma: | inglés |
| OAI Identifier: | oai:repositorio.unesp.br:11449/246096 |
| Acceso en línea: | http://dx.doi.org/10.1016/j.jallcom.2022.167483 http://hdl.handle.net/11449/246096 |
| Access Level: | acceso abierto |
| Palabra clave: | Gas sensor Heterojunction Microwave synthesis Nickel foam NiO/In2O3 Volatile organic compounds |
| Sumario: | Monitoring volatile organic compounds (VOCs) quickly and on-site is essential for preserving human health. The semiconductor gas sensor has been a promising strategy for detecting VOCs. However, stability, selectivity, and sensitivity are crucial for the practical application of a gas-sensor material. Innovative synthetic methods have been studied to improve the properties of sensor materials, such as better detection and stability and the construction of p-n heterojunction materials. In this work, NiO/In2O3 heterostructure was synthesized by fast microwave-assisted solvothermal (MAS) using nickel foam and indium nitrate and was studied as a gas sensor for detecting several VOCs. NiO/In2O3 has the combined properties of NiO, a p-type material, and of In2O3, an n-type. NiO/In2O3 presented a superior performance for detecting n-butanol at the ideal operating temperature (350 °C), with a fast response (6 s), good selectivity, and stability. The n-Butanol response at 100 ppm was Ra/Rg = 412 ± 16, and a linear detection range from 1 to 200 ppm was achieved. The best sensing response for this material towards n-butanol is attributed to the electron depletion layer caused by NiO/In2O3 junction and more adsorption sites obtained during fast MAS synthesis. |
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