Characterization of SiC Thin Films Deposited by HiPIMS
In this work thin films of silicon carbide (SiC) were deposited on silicon wafers by High Power Impulse Magnetron Sputtering (HiPIMS) technique varying the average power of the discharge on a stoichiometric SiC target. X-ray diffraction, Raman spectroscopy, scanning electron microscopy and profilome...
| Autores: | , , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2014 |
| País: | Brasil |
| Institución: | Universidade Federal de São Paulo (UNIFESP) |
| Repositorio: | Repositório Institucional da UNIFESP |
| Idioma: | inglés |
| OAI Identifier: | oai:repositorio.unifesp.br:11600/37469 |
| Acceso en línea: | http://dx.doi.org/10.1590/S1516-14392014005000038 http://repositorio.unifesp.br/handle/11600/37469 |
| Access Level: | acceso abierto |
| Palabra clave: | HiPIMS thin film silicon carbide |
| Sumario: | In this work thin films of silicon carbide (SiC) were deposited on silicon wafers by High Power Impulse Magnetron Sputtering (HiPIMS) technique varying the average power of the discharge on a stoichiometric SiC target. X-ray diffraction, Raman spectroscopy, scanning electron microscopy and profilometry were used to analyze the films. It was observed that high values of the average electric power favors the formation of C-C bonds, while low values of the power promote the formation of Si-C bonds. At high power, we have also observed higher deposition rates, but the samples present surface imperfections, causing increase in the roughness and decrease in the film uniformity. |
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