Synthesis and functional properties of (Al0.2Co0.2Fe0.2Ni0.2Ti0.2)3O4 high entropy spinel oxide
The present study reports the synthesis of a novel (Al0·2Co0·2Fe0·2Ni0·2Ti0.2)3O4 high entropy oxide (HEO) through the solid-state reaction method and its structural, dielectric, electric, and magnetic properties. For the first time, a cumulative study of dielectric, electric, and magnetic propertie...
| Autores: | , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2024 |
| País: | Brasil |
| Institución: | Universidade Estadual Paulista (UNESP) |
| Repositorio: | Repositório Institucional da UNESP |
| Idioma: | inglés |
| OAI Identifier: | oai:repositorio.unesp.br:11449/307816 |
| Acceso en línea: | http://dx.doi.org/10.1016/j.jpcs.2024.112249 https://hdl.handle.net/11449/307816 |
| Access Level: | acceso abierto |
| Palabra clave: | Dielectric and magnetic behavior High entropy oxide Raman spectroscopy RS behavior Spinel structure |
| Sumario: | The present study reports the synthesis of a novel (Al0·2Co0·2Fe0·2Ni0·2Ti0.2)3O4 high entropy oxide (HEO) through the solid-state reaction method and its structural, dielectric, electric, and magnetic properties. For the first time, a cumulative study of dielectric, electric, and magnetic properties of the spinel HEO has been investigated in detail. The obtained HEO has a single-phase spinel structure with Fd-3m space group, confirmed through X-ray diffraction and Raman spectroscopy techniques. Moreover, Raman spectroscopic analysis also confirms that the synthesized spinel HEO is an inverse spinel. The dielectric and magnetic characterizations reveal a better dielectric permittivity of ε′=35 at 1 MHz and high saturation magnetization Ms = 8.58 emu/g with low magnetic coercivity. The leakage current characteristics studied in terms of J-E curves indicate an ohmic conduction mechanism at a low electric field. Moreover, the high dielectric permittivity with resistive switching behavior (observed in the J-E curve) indicates its potential application in resistive switching memory devices, which have better functionality and enhanced scalability. |
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