Tracks and voids in amorphous Ge induced by swift heavy-ion irradiation

Ion tracks formed in amorphous Ge by swift heavy-ion irradiation have been identified with experiment and modeling to yield unambiguous evidence of tracks in an amorphous semiconductor. Their underdense core and overdense shell result from quenched-in radially outward material flow. Following a soli...

Descripción completa

Detalles Bibliográficos
Autores: Ridgway, M.C., Bierschenk, Thomas, Giulian, Raquel, Afra, Boshra, Rodriguez, M. D., Araújo, Leandro Langie, Byrne, A. P., Kirby, Nigel, Pakarinen, O. H., Djurabekova, F., Nordlund, K., Schleberger, M., Osmani, O., Medvedev, N., Rethfeld, B., Kluth, Patrick
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2013
País:Brasil
Institución:Universidade Federal do Rio Grande do Sul (UFRGS)
Repositorio:Repositório Institucional da UFRGS
Idioma:inglés
OAI Identifier:oai:www.lume.ufrgs.br:10183/101366
Acceso en línea:http://hdl.handle.net/10183/101366
Access Level:acceso abierto
Palabra clave:Semicondutores amorfos
Semicondutores elementares
Solidificação
Efeitos de feixe iônico
Germânio
id BR_7b7e089b4004fe402405abd5e9c7fcf4
oai_identifier_str oai:www.lume.ufrgs.br:10183/101366
network_acronym_str BR
network_name_str Brasil
repository_id_str
spelling 2014-08-19T02:10:34Z20130031-9007http://hdl.handle.net/10183/101366000897306Ion tracks formed in amorphous Ge by swift heavy-ion irradiation have been identified with experiment and modeling to yield unambiguous evidence of tracks in an amorphous semiconductor. Their underdense core and overdense shell result from quenched-in radially outward material flow. Following a solid-toliquid phase transformation, the volume contraction necessary to accommodate the high-density molten phase produces voids, potentially the precursors to porosity, along the ion direction. Their bow-tie shape, reproduced by simulation, results from radially inward resolidification.application/pdfengPhysical review letters. New York. Vol. 110, no. 24 (June 2013), 245502, 5 p.Semicondutores amorfosSemicondutores elementaresSolidificaçãoEfeitos de feixe iônicoGermânioTracks and voids in amorphous Ge induced by swift heavy-ion irradiationEstrangeiroinfo:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersioninfo:eu-repo/semantics/openAccessreponame:Repositório Institucional da UFRGSinstname:Universidade Federal do Rio Grande do Sul (UFRGS)instacron:UFRGSRidgway, M.C.Bierschenk, ThomasGiulian, RaquelAfra, BoshraRodriguez, M. D.Araújo, Leandro LangieByrne, A. P.Kirby, NigelPakarinen, O. H.Djurabekova, F.Nordlund, K.Schleberger, M.Osmani, O.Medvedev, N.Rethfeld, B.Kluth, PatrickORIGINAL000897306.pdf000897306.pdfTexto completo (inglês)application/pdf599560http://www.lume.ufrgs.br/bitstream/10183/101366/1/000897306.pdf1c229b549b014cf5aa07e92f1646d5daMD51TEXT000897306.pdf.txt000897306.pdf.txtExtracted Texttext/plain23639http://www.lume.ufrgs.br/bitstream/10183/101366/2/000897306.pdf.txted3e9a2e273d222db3f932d4177532d2MD52THUMBNAIL000897306.pdf.jpg000897306.pdf.jpgGenerated Thumbnailimage/jpeg2095http://www.lume.ufrgs.br/bitstream/10183/101366/3/000897306.pdf.jpg6819d8e995916cbc62312745ff81cc0eMD5310183/1013662024-11-21 07:54:06.689613oai:www.lume.ufrgs.br:10183/101366Repositório InstitucionalPUBhttps://lume.ufrgs.br/oai/requestlume@ufrgs.bropendoar:2024-11-21T09:54:06Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)false
dc.title.pt_BR.fl_str_mv Tracks and voids in amorphous Ge induced by swift heavy-ion irradiation
title Tracks and voids in amorphous Ge induced by swift heavy-ion irradiation
spellingShingle Tracks and voids in amorphous Ge induced by swift heavy-ion irradiation
Ridgway, M.C.
Semicondutores amorfos
Semicondutores elementares
Solidificação
Efeitos de feixe iônico
Germânio
title_short Tracks and voids in amorphous Ge induced by swift heavy-ion irradiation
title_full Tracks and voids in amorphous Ge induced by swift heavy-ion irradiation
title_fullStr Tracks and voids in amorphous Ge induced by swift heavy-ion irradiation
title_full_unstemmed Tracks and voids in amorphous Ge induced by swift heavy-ion irradiation
title_sort Tracks and voids in amorphous Ge induced by swift heavy-ion irradiation
dc.creator.none.fl_str_mv Ridgway, M.C.
Bierschenk, Thomas
Giulian, Raquel
Afra, Boshra
Rodriguez, M. D.
Araújo, Leandro Langie
Byrne, A. P.
Kirby, Nigel
Pakarinen, O. H.
Djurabekova, F.
Nordlund, K.
Schleberger, M.
Osmani, O.
Medvedev, N.
Rethfeld, B.
Kluth, Patrick
author Ridgway, M.C.
author_facet Ridgway, M.C.
Bierschenk, Thomas
Giulian, Raquel
Afra, Boshra
Rodriguez, M. D.
Araújo, Leandro Langie
Byrne, A. P.
Kirby, Nigel
Pakarinen, O. H.
Djurabekova, F.
Nordlund, K.
Schleberger, M.
Osmani, O.
Medvedev, N.
Rethfeld, B.
Kluth, Patrick
author_role author
author2 Bierschenk, Thomas
Giulian, Raquel
Afra, Boshra
Rodriguez, M. D.
Araújo, Leandro Langie
Byrne, A. P.
Kirby, Nigel
Pakarinen, O. H.
Djurabekova, F.
Nordlund, K.
Schleberger, M.
Osmani, O.
Medvedev, N.
Rethfeld, B.
Kluth, Patrick
author2_role author
author
author
author
author
author
author
author
author
author
author
author
author
author
author
dc.subject.por.fl_str_mv Semicondutores amorfos
Semicondutores elementares
Solidificação
Efeitos de feixe iônico
Germânio
topic Semicondutores amorfos
Semicondutores elementares
Solidificação
Efeitos de feixe iônico
Germânio
description Ion tracks formed in amorphous Ge by swift heavy-ion irradiation have been identified with experiment and modeling to yield unambiguous evidence of tracks in an amorphous semiconductor. Their underdense core and overdense shell result from quenched-in radially outward material flow. Following a solid-toliquid phase transformation, the volume contraction necessary to accommodate the high-density molten phase produces voids, potentially the precursors to porosity, along the ion direction. Their bow-tie shape, reproduced by simulation, results from radially inward resolidification.
publishDate 2013
dc.date.issued.fl_str_mv 2013
dc.date.accessioned.fl_str_mv 2014-08-19T02:10:34Z
dc.type.driver.fl_str_mv Estrangeiro
info:eu-repo/semantics/article
dc.type.status.fl_str_mv info:eu-repo/semantics/publishedVersion
format article
status_str publishedVersion
dc.identifier.uri.fl_str_mv http://hdl.handle.net/10183/101366
dc.identifier.issn.pt_BR.fl_str_mv 0031-9007
dc.identifier.nrb.pt_BR.fl_str_mv 000897306
identifier_str_mv 0031-9007
000897306
url http://hdl.handle.net/10183/101366
dc.language.iso.fl_str_mv eng
language eng
dc.relation.ispartof.pt_BR.fl_str_mv Physical review letters. New York. Vol. 110, no. 24 (June 2013), 245502, 5 p.
dc.rights.driver.fl_str_mv info:eu-repo/semantics/openAccess
eu_rights_str_mv openAccess
dc.format.none.fl_str_mv application/pdf
dc.source.none.fl_str_mv reponame:Repositório Institucional da UFRGS
instname:Universidade Federal do Rio Grande do Sul (UFRGS)
instacron:UFRGS
instname_str Universidade Federal do Rio Grande do Sul (UFRGS)
instacron_str UFRGS
institution UFRGS
reponame_str Repositório Institucional da UFRGS
collection Repositório Institucional da UFRGS
bitstream.url.fl_str_mv http://www.lume.ufrgs.br/bitstream/10183/101366/1/000897306.pdf
http://www.lume.ufrgs.br/bitstream/10183/101366/2/000897306.pdf.txt
http://www.lume.ufrgs.br/bitstream/10183/101366/3/000897306.pdf.jpg
bitstream.checksum.fl_str_mv 1c229b549b014cf5aa07e92f1646d5da
ed3e9a2e273d222db3f932d4177532d2
6819d8e995916cbc62312745ff81cc0e
bitstream.checksumAlgorithm.fl_str_mv MD5
MD5
MD5
repository.name.fl_str_mv Repositório Institucional da UFRGS - Universidade Federal do Rio Grande do Sul (UFRGS)
repository.mail.fl_str_mv lume@ufrgs.br
_version_ 1853675761654824960
score 15,300719

Similares en LA Referencia