In situ electrical resistivity of thin-film beta-nial under ar irradiation at 77 k
We report on the dose dependence of the in sítu electrical resistivity of a thin-film NiAl alloy under 120-keV-Ar-ion irradiation at 77 K. The results show two different behaviors. First, the values of resistivity increase, exhibiting a maximum, and then, for higher doses, the electrical resistivity...
| Autores: | , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 1992 |
| País: | Brasil |
| Institución: | Universidade Federal do Rio Grande do Sul (UFRGS) |
| Repositorio: | Repositório Institucional da UFRGS |
| Idioma: | inglés |
| OAI Identifier: | oai:www.lume.ufrgs.br:10183/103619 |
| Acceso en línea: | http://hdl.handle.net/10183/103619 |
| Access Level: | acceso abierto |
| Palabra clave: | Implantacao ionica Filmes finos Condutividade Radiacao ionica Intermetalicos Mistura por bombardeamento ionico |
| Sumario: | We report on the dose dependence of the in sítu electrical resistivity of a thin-film NiAl alloy under 120-keV-Ar-ion irradiation at 77 K. The results show two different behaviors. First, the values of resistivity increase, exhibiting a maximum, and then, for higher doses, the electrical resistivity decreases down to saturation. Our results are interpreted in terms of simple composite models that assume local transformation of the solid by successive ion impacts. |
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