Estudo sobre a formação da solução sólida em filmes finos de zrn+si depositados via magnetron sputtering reativo
ZrN thin films with 1.6% Si addition were deposited via reactive magnetron sputtering and characterized by RBS, SEM-FEG, GAXRD, XPS and high temperature oxidation tests, aiming to investigate how structurally silicon is inserted in ZrN matrix. GAXRD analyses show a reduction in lattice parameter and...
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| Tipo de recurso: | tesis de maestría |
| Estado: | Versión publicada |
| Fecha de publicación: | 2023 |
| País: | Brasil |
| Institución: | Universidade Federal de Sergipe (UFS) |
| Repositorio: | Repositório Institucional da UFS |
| Idioma: | portugués |
| OAI Identifier: | oai:oai:ri.ufs.br:repo_01:riufs/17932 |
| Acceso en línea: | https://ri.ufs.br/jspui/handle/riufs/17932 |
| Access Level: | acceso abierto |
| Palabra clave: | Filmes finos Solução sólida ZrN Si3N4 Magnetron sputtering Magnetron sputtering reativo Thin films Solid solution Reactive magnetron sputtering ENGENHARIAS::ENGENHARIA DE MATERIAIS E METALURGICA |
| Sumario: | ZrN thin films with 1.6% Si addition were deposited via reactive magnetron sputtering and characterized by RBS, SEM-FEG, GAXRD, XPS and high temperature oxidation tests, aiming to investigate how structurally silicon is inserted in ZrN matrix. GAXRD analyses show a reduction in lattice parameter and grain size due to Si incorporation and XPS analyses demonstrate Si is present in nitride form. Such observations suggest the non-formation of substitutional or interstitial solid solution with ZrN, but the presence of Si3N4, even in low Si concentrations. |
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