Structural evolution study by solid-state NMR of photopolymerizable aluminophosphosilicate hybrid materials

Aluminophosphosilicate materials of composition (mol.%) xSiO2[(Al2O3)50–(P2O5)50]100-x were prepared through sol-gel method and heat-treated yielding non-crystalline materials. The structural evolution from the hybrid to heat-treated material as a function of the SiO2 content was studied by 13C, 29S...

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Detalles Bibliográficos
Autores: Costa, Beatriz Helena [UNESP], Tayama, Gabriel Toshiaki, Santagneli, Silvia Helena [UNESP]
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2024
País:Brasil
Institución:Universidade Estadual Paulista (UNESP)
Repositorio:Repositório Institucional da UNESP
Idioma:inglés
OAI Identifier:oai:repositorio.unesp.br:11449/304394
Acceso en línea:http://dx.doi.org/10.1016/j.jnoncrysol.2024.123105
https://hdl.handle.net/11449/304394
Access Level:acceso abierto
Palabra clave:Aluminophosphosilicate hybrid material
Sol-gel
Solid-state NMR
Descripción
Sumario:Aluminophosphosilicate materials of composition (mol.%) xSiO2[(Al2O3)50–(P2O5)50]100-x were prepared through sol-gel method and heat-treated yielding non-crystalline materials. The structural evolution from the hybrid to heat-treated material as a function of the SiO2 content was studied by 13C, 29Si, 31P and 27Al solid-state NMR, infrared spectroscopies, X-ray diffraction and differential scanning calorimetry (DSC). NMR analyses showed the AlPO4 formation in the matrix and heterocondensation, forming Al-O-P and P-O-Si linkages. The heat treatment promoted the formation of a more interconnected SiO2 tetrahedra network as the SiO2 content increased. Similar to the hybrid materials, the increase of SiO2 content induces the replacement of P-O-Al(IV) bonds by Si-O-Al(IV) bonds in the heat-treated materials as confirmed by 27Al NMR and 27Al{31P} REDOR data, which was also supported by Raman analysis. This sol-gel route provides a novel way to fabricate new homogeneous materials, which can be doped with rare earths and applied to new optical devices.