Hysteretic current-voltage characteristics in RF-sputtered nanocrystalline TiO2 thin films
We have measured the current–voltage characteristics at room temperature of a nanocrystalline TiO2 thin film fabricated by reactive RF-sputtering deposition and sandwiched between ITO (indium–tin–oxide)-buffered glass substrate and an indium top electrode. The I–V characteristics are ohmic for low v...
| Autores: | , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2007 |
| País: | Argentina |
| Institución: | Consejo Nacional de Investigaciones Científicas y Técnicas |
| Repositorio: | CONICET Digital (CONICET) |
| Idioma: | inglés |
| OAI Identifier: | oai:ri.conicet.gov.ar:11336/82958 |
| Acceso en línea: | http://hdl.handle.net/11336/82958 |
| Access Level: | acceso abierto |
| Palabra clave: | Memorias Electrónicas Switching Tio2 Nanocristalino https://purl.org/becyt/ford/1.3 https://purl.org/becyt/ford/1 |
| Sumario: | We have measured the current–voltage characteristics at room temperature of a nanocrystalline TiO2 thin film fabricated by reactive RF-sputtering deposition and sandwiched between ITO (indium–tin–oxide)-buffered glass substrate and an indium top electrode. The I–V characteristics are ohmic for low voltages and become non-linear, hysteretic and asymmetric as the voltage is increased. The system is shown to be well represented by two distinct resistance states in the non-ohmic region. Current transient evolutions were also measured for constant voltage excitations. The resistance is stable in time for voltages in the ohmic regime. In contrast, for voltages in the non-ohmic regime, the resistance has a small variation for a short period of time (order of tens seconds) and then increases with time. For those transients, long characteristic times (on the order of tens of minutes up to hours) were found. The behavior of the system is discussed on the basis of experimental results reported in the literature for similar systems and existing models for electric-field induced resistive switching. |
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