Spin Drift Velocity, Polarization, and Current-Driven Domain-Wall Motion in (Ga,Mn)(As,P)

Current-driven domain wall motion is studied in (Ga,Mn)(As,P) ferromagnetic semiconducting tracks with perpendicular anisotropy. A linear steady state flow regime is evidenced over a large temperature range of the ferromagnetic phase (0.1Tc < T < Tc). Close to 0 K, the domain wall velocity is...

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Detalles Bibliográficos
Autores: Curiale, Carlos Javier, Lemaître, A., Ulysse, C., Faini, G., Jeudy, V.
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2012
País:Argentina
Institución:Consejo Nacional de Investigaciones Científicas y Técnicas
Repositorio:CONICET Digital (CONICET)
Idioma:inglés
OAI Identifier:oai:ri.conicet.gov.ar:11336/193540
Acceso en línea:http://hdl.handle.net/11336/193540
Access Level:acceso abierto
Palabra clave:DOMAIN WALL
(Ga,Mn)(As,P)
GaMnAs
SPIN CURRENT
MAGNETIC SEMICONDUCTOR
MAGNETO-OPTICAL
KERR MICROSCOPY
https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
https://purl.org/becyt/ford/2.10
https://purl.org/becyt/ford/2
Descripción
Sumario:Current-driven domain wall motion is studied in (Ga,Mn)(As,P) ferromagnetic semiconducting tracks with perpendicular anisotropy. A linear steady state flow regime is evidenced over a large temperature range of the ferromagnetic phase (0.1Tc < T < Tc). Close to 0 K, the domain wall velocity is found to coincide with the spin drift velocity. This result is obtained below the intrinsic threshold for domain wall motion which implies a non-adiabatic contribution to the spin transfer torque. The current spin polarization is deduced close to 0 K and to Tc. It suggests that the temperature dependence of the spin polarization can be inferred from the domain wall dynamics.