Direct observation of the influence of the As-Fe-As angle on the T c of superconducting SmFeAsO1-xFx

The electrical resistivity, crystalline structure, and electronic properties calculated from the experimentally measured atomic positions of the compound SmFeAsO0.81F0.19 have been studied up to pressures ∼20 GPa. The correlation between the pressure dependence of the superconducting transition temp...

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Detalhes bibliográficos
Autores: Garbarino, G., Weht, Ruben Oscar, Sow, A., Sulpice, A., Toulemonde, P., Álvarez Murga, M., Strobel, P., Bouvier, P., Mezouar, M., Núñez Regueiro, M.
Formato: artículo
Estado:Versión publicada
Fecha de publicación:2011
País:Argentina
Recursos:Consejo Nacional de Investigaciones Científicas y Técnicas
Repositorio:CONICET Digital (CONICET)
Idioma:inglés
OAI Identifier:oai:ri.conicet.gov.ar:11336/192445
Acesso em linha:http://hdl.handle.net/11336/192445
Access Level:acceso abierto
Palavra-chave:SUPERCONDUCTIVITY
HIGH PRESSURE
ELECTRONIC STRUCTURE
SYNCHROTRON RADIATION
https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
Descrição
Resumo:The electrical resistivity, crystalline structure, and electronic properties calculated from the experimentally measured atomic positions of the compound SmFeAsO0.81F0.19 have been studied up to pressures ∼20 GPa. The correlation between the pressure dependence of the superconducting transition temperature (Tc) and crystallographic parameters on the same sample shows clearly that a regular FeAs4 tetrahedron maximizes Tc through optimization of carrier transfer to the FeAs planes as indicated by the evolution of the electronic band structures.

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