Conductance of a quantum dot in the Kondo regime connected to dirty wires
We study the transport behavior induced by a small bias voltage through a quantum dot connected to one-channel disordered wires by means of a quantum Monte Carlo method. We model the quantum dot by the Hubbard-Anderson impurity and the wires by the one-dimensional Anderson model with diagonal disord...
| Autores: | , |
|---|---|
| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2012 |
| País: | Argentina |
| Institución: | Consejo Nacional de Investigaciones Científicas y Técnicas |
| Repositorio: | CONICET Digital (CONICET) |
| Idioma: | inglés |
| OAI Identifier: | oai:ri.conicet.gov.ar:11336/56103 |
| Acceso en línea: | http://hdl.handle.net/11336/56103 |
| Access Level: | acceso abierto |
| Palabra clave: | Kondo Quantum Transport Dot https://purl.org/becyt/ford/1.3 https://purl.org/becyt/ford/1 |
| Sumario: | We study the transport behavior induced by a small bias voltage through a quantum dot connected to one-channel disordered wires by means of a quantum Monte Carlo method. We model the quantum dot by the Hubbard-Anderson impurity and the wires by the one-dimensional Anderson model with diagonal disorder within a length. We present a complete description of the probability distribution function of the conductance within the Kondo regime. © 2012 American Physical Society. |
|---|