Dc four-point resistance of a double-barrier quantum pump

We investigate the behavior of the dc voltage drop in a periodically driven double-barrier structure (DBS) sensed by voltages probes that are weakly coupled to the system. We find that the four-terminal resistance R4t measured with the probes located outside the DBS results identical to the resistan...

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Bibliographic Details
Authors: Foieri, Federico Nicolas, Arrachea, Liliana del Carmen, Sánchez, María José
Format: article
Status:Published version
Publication Date:2009
Country:Argentina
Institution:Consejo Nacional de Investigaciones Científicas y Técnicas
Repository:CONICET Digital (CONICET)
Language:English
OAI Identifier:oai:ri.conicet.gov.ar:11336/60900
Online Access:http://hdl.handle.net/11336/60900
Access Level:Open access
Keyword:Theory
Quantum
Transport
https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
Description
Summary:We investigate the behavior of the dc voltage drop in a periodically driven double-barrier structure (DBS) sensed by voltages probes that are weakly coupled to the system. We find that the four-terminal resistance R4t measured with the probes located outside the DBS results identical to the resistance measured in the same structure under a stationary bias voltage difference between left and right reservoirs. This result valid beyond the adiabatic pumping regime can be taken as an indication of the universal character of R4t as a measure of the resistive properties of a sample, irrespectively, of the mechanism used to induce the transport. © 2009 The American Physical Society.