Influence of oxygen adsorption and diffusion on the overlapping of intergranular potential barriers in SnO2 thick films

Complex impedance analysis and transient response studies in SnO2 thick films show the impedance dependence on gaseous environment and temperature. Possible mechanisms responsible for the found behaviors are proposed. The influence of temperature on the oxygen diffusion into the grains annihilating...

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Detalles Bibliográficos
Autores: Ponce, Miguel Adolfo, Castro, Miriam Susana, Aldao, Celso Manuel
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2004
País:Argentina
Institución:Consejo Nacional de Investigaciones Científicas y Técnicas
Repositorio:CONICET Digital (CONICET)
Idioma:inglés
OAI Identifier:oai:ri.conicet.gov.ar:11336/96301
Acceso en línea:http://hdl.handle.net/11336/96301
Access Level:acceso abierto
Palabra clave:ELECTRICAL PROPERTIES
GAS SENSORS
SCHOTTKY BARRIERS
TIN OXIDE
https://purl.org/becyt/ford/2.11
https://purl.org/becyt/ford/2
Descripción
Sumario:Complex impedance analysis and transient response studies in SnO2 thick films show the impedance dependence on gaseous environment and temperature. Possible mechanisms responsible for the found behaviors are proposed. The influence of temperature on the oxygen diffusion into the grains annihilating oxygen vacancies was detected. In particular, we found the transition from having bulk regions unaffected by surface phenomena to the overlapping of potential barriers due to an oxidizing gas.