Electrical and spectroscopic analysis in nanostructured SnO2: "long-term" resistance drift is due to in-diffusion
A model for conductance in n-type non-degenerate semiconductors is proposed and applied to polycrystalline SnO2 used as a gas sensor. Particular attention is devoted to the fundamental mechanism of Schottky barrier formation due to surface states in nanostructured grains. Electrical and absorption i...
| Authors: | , , , |
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| Format: | article |
| Status: | Published version |
| Publication Date: | 2011 |
| Country: | Argentina |
| Institution: | Consejo Nacional de Investigaciones Científicas y Técnicas |
| Repository: | CONICET Digital (CONICET) |
| Language: | English |
| OAI Identifier: | oai:ri.conicet.gov.ar:11336/10312 |
| Online Access: | http://hdl.handle.net/11336/10312 |
| Access Level: | Open access |
| Keyword: | NANOESTRUCTURE TIN OXIDE METAL OXIDE SENSORS VACANCIES SURFACE STATES TUNNELING CONDUCTION BANDS FOURIER TRANSFORM INFRARED SPECTROSCOPY https://purl.org/becyt/ford/2.5 https://purl.org/becyt/ford/2 https://purl.org/becyt/ford/1.3 https://purl.org/becyt/ford/1 |
| Summary: | A model for conductance in n-type non-degenerate semiconductors is proposed and applied to polycrystalline SnO2 used as a gas sensor. Particular attention is devoted to the fundamental mechanism of Schottky barrier formation due to surface states in nanostructured grains. Electrical and absorption infra-red spectroscopic analysis constitutes strong evidence for oxygen diffusion into the tin oxide grains. The model is then extended to include oxygen in- and out-diffusion. Thus, it is possible to explain the “long-term” resistance drift in oxygen for fully depleted grained samples in terms of tunneling through the double barrier. |
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