Evaluation of the characteristic curves of a-Si:H based devices with the Simmons-Taylor approximation when the defect pool model is used

The performance of a-Si:H devices is highly sensitive to the density of gap states: tail states are distributed in two exponentials and defect states are generated by dangling bonds (DB). The density of DB in a-Si:H can be evaluated with the defect pool model (DPM). Charge trapping and recombination...

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Detalles Bibliográficos
Autores: de Greef, Marcelo Gastón, Rubinelli, Francisco Alberto
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2015
País:Argentina
Institución:Consejo Nacional de Investigaciones Científicas y Técnicas
Repositorio:CONICET Digital (CONICET)
Idioma:inglés
OAI Identifier:oai:ri.conicet.gov.ar:11336/10048
Acceso en línea:http://hdl.handle.net/11336/10048
Access Level:acceso abierto
Palabra clave:Amorphous Silicon Devices
Solar Cells
Optical Detectors
Defect Pool Model
https://purl.org/becyt/ford/2.2
https://purl.org/becyt/ford/2
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spelling Evaluation of the characteristic curves of a-Si:H based devices with the Simmons-Taylor approximation when the defect pool model is usedde Greef, Marcelo GastónRubinelli, Francisco AlbertoAmorphous Silicon DevicesSolar CellsOptical DetectorsDefect Pool Modelhttps://purl.org/becyt/ford/2.2https://purl.org/becyt/ford/2The performance of a-Si:H devices is highly sensitive to the density of gap states: tail states are distributed in two exponentials and defect states are generated by dangling bonds (DB). The density of DB in a-Si:H can be evaluated with the defect pool model (DPM). Charge trapping and recombination of electron–hole pairs through tail states are described by the Shockley–Read–Hall (SRH) formalism while defect states behave as amphoteric. Equations derived with the SRH formalism can be simplified with the Simmons–Taylor’s approximation (STA), especially with the “0K” approximation (0KSTA). Amphoteric-like defect states were approximated by donor- and acceptor-like decoupled states (DSA). The accuracy of STA was tested in a-Si:H based devices when the density of DB is evaluated with the DPM for different illumination conditions, voltages, temperatures, and some key electrical parameters. Our code was modified to include both the STA and the DSA. Our results indicate that the STA is very accurate under illuminated conditions. Under dark conditions, the STA is acceptable for forward voltages but overestimates the dark current at reverse voltages. The 0KSTA can be used under illuminated conditions for any applied voltage and under dark conditions for forward voltages.Fil: de Greef, Marcelo Gastón. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico Para la Industria Química (i); ArgentinaFil: Rubinelli, Francisco Alberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Santa Fe. Instituto de Desarrollo Tecnológico Para la Industria Química (i); ArgentinaWiley Vch Verlag2015-01info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/10048de Greef, Marcelo Gastón; Rubinelli, Francisco Alberto; Evaluation of the characteristic curves of a-Si:H based devices with the Simmons-Taylor approximation when the defect pool model is used; Wiley Vch Verlag; Physica Status Solidi B-basic Research; 252; 1; 1-2015; 170-1800370-1972enginfo:eu-repo/semantics/altIdentifier/url/http://dx.doi.org/10.1002/pssb.201451065info:eu-repo/semantics/altIdentifier/url/http://onlinelibrary.wiley.com/doi/10.1002/pssb.201451065/abstractinfo:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2024-05-08T13:39:31Zoai:ri.conicet.gov.ar:11336/10048instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982024-05-08 13:39:31.569CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Evaluation of the characteristic curves of a-Si:H based devices with the Simmons-Taylor approximation when the defect pool model is used
title Evaluation of the characteristic curves of a-Si:H based devices with the Simmons-Taylor approximation when the defect pool model is used
spellingShingle Evaluation of the characteristic curves of a-Si:H based devices with the Simmons-Taylor approximation when the defect pool model is used
de Greef, Marcelo Gastón
Amorphous Silicon Devices
Solar Cells
Optical Detectors
Defect Pool Model
https://purl.org/becyt/ford/2.2
https://purl.org/becyt/ford/2
title_short Evaluation of the characteristic curves of a-Si:H based devices with the Simmons-Taylor approximation when the defect pool model is used
title_full Evaluation of the characteristic curves of a-Si:H based devices with the Simmons-Taylor approximation when the defect pool model is used
title_fullStr Evaluation of the characteristic curves of a-Si:H based devices with the Simmons-Taylor approximation when the defect pool model is used
title_full_unstemmed Evaluation of the characteristic curves of a-Si:H based devices with the Simmons-Taylor approximation when the defect pool model is used
title_sort Evaluation of the characteristic curves of a-Si:H based devices with the Simmons-Taylor approximation when the defect pool model is used
dc.creator.none.fl_str_mv de Greef, Marcelo Gastón
Rubinelli, Francisco Alberto
author de Greef, Marcelo Gastón
author_facet de Greef, Marcelo Gastón
Rubinelli, Francisco Alberto
author_role author
author2 Rubinelli, Francisco Alberto
author2_role author
dc.subject.none.fl_str_mv Amorphous Silicon Devices
Solar Cells
Optical Detectors
Defect Pool Model
https://purl.org/becyt/ford/2.2
https://purl.org/becyt/ford/2
topic Amorphous Silicon Devices
Solar Cells
Optical Detectors
Defect Pool Model
https://purl.org/becyt/ford/2.2
https://purl.org/becyt/ford/2
description The performance of a-Si:H devices is highly sensitive to the density of gap states: tail states are distributed in two exponentials and defect states are generated by dangling bonds (DB). The density of DB in a-Si:H can be evaluated with the defect pool model (DPM). Charge trapping and recombination of electron–hole pairs through tail states are described by the Shockley–Read–Hall (SRH) formalism while defect states behave as amphoteric. Equations derived with the SRH formalism can be simplified with the Simmons–Taylor’s approximation (STA), especially with the “0K” approximation (0KSTA). Amphoteric-like defect states were approximated by donor- and acceptor-like decoupled states (DSA). The accuracy of STA was tested in a-Si:H based devices when the density of DB is evaluated with the DPM for different illumination conditions, voltages, temperatures, and some key electrical parameters. Our code was modified to include both the STA and the DSA. Our results indicate that the STA is very accurate under illuminated conditions. Under dark conditions, the STA is acceptable for forward voltages but overestimates the dark current at reverse voltages. The 0KSTA can be used under illuminated conditions for any applied voltage and under dark conditions for forward voltages.
publishDate 2015
dc.date.none.fl_str_mv 2015-01
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/10048
de Greef, Marcelo Gastón; Rubinelli, Francisco Alberto; Evaluation of the characteristic curves of a-Si:H based devices with the Simmons-Taylor approximation when the defect pool model is used; Wiley Vch Verlag; Physica Status Solidi B-basic Research; 252; 1; 1-2015; 170-180
0370-1972
url http://hdl.handle.net/11336/10048
identifier_str_mv de Greef, Marcelo Gastón; Rubinelli, Francisco Alberto; Evaluation of the characteristic curves of a-Si:H based devices with the Simmons-Taylor approximation when the defect pool model is used; Wiley Vch Verlag; Physica Status Solidi B-basic Research; 252; 1; 1-2015; 170-180
0370-1972
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/url/http://dx.doi.org/10.1002/pssb.201451065
info:eu-repo/semantics/altIdentifier/url/http://onlinelibrary.wiley.com/doi/10.1002/pssb.201451065/abstract
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv Wiley Vch Verlag
publisher.none.fl_str_mv Wiley Vch Verlag
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 15,812429

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