Asymmetry between the electron- and hole-doped Mott transition in the periodic Anderson model
We study the doping-driven Mott metal-insulator transition (MIT) in the periodic Anderson model set in the Mott-Hubbard regime. A striking asymmetry for electron- or hole-driven transitions is found. The electron-doped MIT at larger U is similar to the one found in the single band Hubbard model, wit...
| Autores: | , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2009 |
| País: | Argentina |
| Institución: | Consejo Nacional de Investigaciones Científicas y Técnicas |
| Repositorio: | CONICET Digital (CONICET) |
| Idioma: | inglés |
| OAI Identifier: | oai:ri.conicet.gov.ar:11336/61662 |
| Acceso en línea: | http://hdl.handle.net/11336/61662 |
| Access Level: | acceso abierto |
| Palabra clave: | Mott Transition Strongly Correlated Electron Systems https://purl.org/becyt/ford/1.3 https://purl.org/becyt/ford/1 |
| Sumario: | We study the doping-driven Mott metal-insulator transition (MIT) in the periodic Anderson model set in the Mott-Hubbard regime. A striking asymmetry for electron- or hole-driven transitions is found. The electron-doped MIT at larger U is similar to the one found in the single band Hubbard model, with a first-order character due to coexistence of solutions. The hole-doped MIT, in contrast, is second order and can be described as the delocalization of Zhang-Rice singlets. © 2009 The American Physical Society. |
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