Characterization of thin polycrystalline silicon films deposited on glass by CVD
We deposited polycrystalline silicon (poly-Si) thin films on commercial float glass by chemical vapour deposition from trichlorosilane at temperatures between 735 and 870°C. The structural properties of the films were evaluated by means of scanning electron microscopy, x-ray diffraction, atomic forc...
| Autores: | , , , , |
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| Formato: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2012 |
| País: | Argentina |
| Recursos: | Consejo Nacional de Investigaciones Científicas y Técnicas |
| Repositorio: | CONICET Digital (CONICET) |
| Idioma: | inglés |
| OAI Identifier: | oai:ri.conicet.gov.ar:11336/76424 |
| Acesso em linha: | http://hdl.handle.net/11336/76424 |
| Access Level: | acceso abierto |
| Palavra-chave: | Polycrystalline Silicon Electrical Properties Raman Spectroscopy https://purl.org/becyt/ford/1.3 https://purl.org/becyt/ford/1 https://purl.org/becyt/ford/2.5 https://purl.org/becyt/ford/2 |
| Resumo: | We deposited polycrystalline silicon (poly-Si) thin films on commercial float glass by chemical vapour deposition from trichlorosilane at temperatures between 735 and 870°C. The structural properties of the films were evaluated by means of scanning electron microscopy, x-ray diffraction, atomic force microscopy, reflectance in the ultraviolet region and Raman spectroscopy. The electrical characterization involved measurements of dark conductivity and photoconductivity as a function of temperature, Hall effect, ambipolar diffusion length from the steady-state photocarrier grating technique and density of defects by means of modulated photoconductivity. By using boron tribromide as a doping agent, degrees of doping ranging from intrinsic to clearly p-doped were obtained. The process, the reactants and the substrate used are of low cost, and proved to be adequate for direct poly-Si deposition, giving films of good structural and electrical properties. |
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