Modeling a-Si:H p-i-n solar cells with the defect pool model

Using self-consistent computer modeling we find that the experimental current–voltage (J–V) and the spectral response (SR) characteristic curves of a-Si:H p–i–n solar cells can be fitted by either assuming a uniform density of dangling bonds (DB) in each device layer (UDM) or by relying on the defec...

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Autores: Klimovsky, E., Rath, J. K., Schropp, R. E. I., Rubinelli, Francisco Alberto
Tipo de recurso: artículo
Estado:Versión publicada
Fecha de publicación:2004
País:Argentina
Institución:Consejo Nacional de Investigaciones Científicas y Técnicas
Repositorio:CONICET Digital (CONICET)
Idioma:inglés
OAI Identifier:oai:ri.conicet.gov.ar:11336/27253
Acceso en línea:http://hdl.handle.net/11336/27253
Access Level:acceso abierto
Palabra clave:Solar Cells
Defect Pool
Amorphous Silicon
J-V Curves
https://purl.org/becyt/ford/2.2
https://purl.org/becyt/ford/2
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spelling Modeling a-Si:H p-i-n solar cells with the defect pool modelKlimovsky, E.Rath, J. K.Schropp, R. E. I.Rubinelli, Francisco AlbertoSolar CellsDefect PoolAmorphous SiliconJ-V Curveshttps://purl.org/becyt/ford/2.2https://purl.org/becyt/ford/2Using self-consistent computer modeling we find that the experimental current–voltage (J–V) and the spectral response (SR) characteristic curves of a-Si:H p–i–n solar cells can be fitted by either assuming a uniform density of dangling bonds (DB) in each device layer (UDM) or by relying on the defect pool model (DPM). Fittings within the DPM were achieved using the algorithms proposed by Powell and Deane and Schumm. One Si–H bond mediating in the creation of dangling bonds in the first expressions proposed by Powell and Deane and Schumm are appropriate for modeling solar cells in the initial state. The applicability of the algorithm proposed by Schumm for a-Si:H in the stabilized state is also discussed in solar cells. Using DPM we have explored the optimum doping and band gap profile in the intrinsic layer leading us to the maximum efficiency of a-Si:H p–i–n cells.Fil: Klimovsky, E.. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; ArgentinaFil: Rath, J. K.. Utrecht University; Países BajosFil: Schropp, R. E. I.. Utrecht University; Países BajosFil: Rubinelli, Francisco Alberto. Consejo Nacional de Investigaciones Científicas y Técnicas. Centro Científico Tecnológico Conicet - Santa Fe. Instituto de Desarrollo Tecnológico para la Industria Química. Universidad Nacional del Litoral. Instituto de Desarrollo Tecnológico para la Industria Química; ArgentinaElsevier Science2004-06info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/27253Klimovsky, E.; Rath, J. K.; Schropp, R. E. I.; Rubinelli, Francisco Alberto; Modeling a-Si:H p-i-n solar cells with the defect pool model; Elsevier Science; Journal of Non-crystalline Solids; 338-340; 6-2004; 686-6890022-3093CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1016/j.jnoncrysol.2004.03.064info:eu-repo/semantics/altIdentifier/url/http://www.sciencedirect.com/science/article/pii/S002230930400239Xinfo:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2024-05-08T13:39:36Zoai:ri.conicet.gov.ar:11336/27253instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982024-05-08 13:39:37.1CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
dc.title.none.fl_str_mv Modeling a-Si:H p-i-n solar cells with the defect pool model
title Modeling a-Si:H p-i-n solar cells with the defect pool model
spellingShingle Modeling a-Si:H p-i-n solar cells with the defect pool model
Klimovsky, E.
Solar Cells
Defect Pool
Amorphous Silicon
J-V Curves
https://purl.org/becyt/ford/2.2
https://purl.org/becyt/ford/2
title_short Modeling a-Si:H p-i-n solar cells with the defect pool model
title_full Modeling a-Si:H p-i-n solar cells with the defect pool model
title_fullStr Modeling a-Si:H p-i-n solar cells with the defect pool model
title_full_unstemmed Modeling a-Si:H p-i-n solar cells with the defect pool model
title_sort Modeling a-Si:H p-i-n solar cells with the defect pool model
dc.creator.none.fl_str_mv Klimovsky, E.
Rath, J. K.
Schropp, R. E. I.
Rubinelli, Francisco Alberto
author Klimovsky, E.
author_facet Klimovsky, E.
Rath, J. K.
Schropp, R. E. I.
Rubinelli, Francisco Alberto
author_role author
author2 Rath, J. K.
Schropp, R. E. I.
Rubinelli, Francisco Alberto
author2_role author
author
author
dc.subject.none.fl_str_mv Solar Cells
Defect Pool
Amorphous Silicon
J-V Curves
https://purl.org/becyt/ford/2.2
https://purl.org/becyt/ford/2
topic Solar Cells
Defect Pool
Amorphous Silicon
J-V Curves
https://purl.org/becyt/ford/2.2
https://purl.org/becyt/ford/2
description Using self-consistent computer modeling we find that the experimental current–voltage (J–V) and the spectral response (SR) characteristic curves of a-Si:H p–i–n solar cells can be fitted by either assuming a uniform density of dangling bonds (DB) in each device layer (UDM) or by relying on the defect pool model (DPM). Fittings within the DPM were achieved using the algorithms proposed by Powell and Deane and Schumm. One Si–H bond mediating in the creation of dangling bonds in the first expressions proposed by Powell and Deane and Schumm are appropriate for modeling solar cells in the initial state. The applicability of the algorithm proposed by Schumm for a-Si:H in the stabilized state is also discussed in solar cells. Using DPM we have explored the optimum doping and band gap profile in the intrinsic layer leading us to the maximum efficiency of a-Si:H p–i–n cells.
publishDate 2004
dc.date.none.fl_str_mv 2004-06
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/27253
Klimovsky, E.; Rath, J. K.; Schropp, R. E. I.; Rubinelli, Francisco Alberto; Modeling a-Si:H p-i-n solar cells with the defect pool model; Elsevier Science; Journal of Non-crystalline Solids; 338-340; 6-2004; 686-689
0022-3093
CONICET Digital
CONICET
url http://hdl.handle.net/11336/27253
identifier_str_mv Klimovsky, E.; Rath, J. K.; Schropp, R. E. I.; Rubinelli, Francisco Alberto; Modeling a-Si:H p-i-n solar cells with the defect pool model; Elsevier Science; Journal of Non-crystalline Solids; 338-340; 6-2004; 686-689
0022-3093
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1016/j.jnoncrysol.2004.03.064
info:eu-repo/semantics/altIdentifier/url/http://www.sciencedirect.com/science/article/pii/S002230930400239X
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv Elsevier Science
publisher.none.fl_str_mv Elsevier Science
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
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score 15,811543

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