Influence of the oxide–semiconductor interface on the resistive switching phenomenon in metal/Al2O3/InGaAs
In this work, the influence of the oxide–semiconductor interface on the resistive switching phenomenon was studied in metal gates /Al2O3/InGaAs structures. Different sets of samples were manufactured to produce different qualities of oxide–semiconductor interfaces. The influence of the Al2O3/InGaAs...
| Autores: | , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2014 |
| País: | Argentina |
| Institución: | Consejo Nacional de Investigaciones Científicas y Técnicas |
| Repositorio: | CONICET Digital (CONICET) |
| Idioma: | inglés |
| OAI Identifier: | oai:ri.conicet.gov.ar:11336/32762 |
| Acceso en línea: | http://hdl.handle.net/11336/32762 |
| Access Level: | acceso abierto |
| Palabra clave: | Ingaas Resistive Switching Interface States https://purl.org/becyt/ford/1.3 https://purl.org/becyt/ford/1 |
| Sumario: | In this work, the influence of the oxide–semiconductor interface on the resistive switching phenomenon was studied in metal gates /Al2O3/InGaAs structures. Different sets of samples were manufactured to produce different qualities of oxide–semiconductor interfaces. The influence of the Al2O3/InGaAs interface on the resistive switching effect was studied by combining electrical characterizations with an analysis of the composition of the oxide/semiconductor interface. The results suggest that a low surface quality results in a decrease of the damage on the conductive filament responsible for the transitions between two resistive states. |
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