Stochastic Current-Induced Magnetization Switching in a Single Semiconducting Ferromagnetic Layer
We show experimental evidence of magnetization switching in a single (Ga,Mn)(As,P) semiconducting ferromagnetic layer, attributed to a strong reduction of the magnetization and the anisotropy due to current injection. The nucleation of magnetization reversal is found to occur even in the absence of...
| Autores: | , , , , , , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2014 |
| País: | Argentina |
| Institución: | Consejo Nacional de Investigaciones Científicas y Técnicas |
| Repositorio: | CONICET Digital (CONICET) |
| Idioma: | inglés |
| OAI Identifier: | oai:ri.conicet.gov.ar:11336/27543 |
| Acceso en línea: | http://hdl.handle.net/11336/27543 |
| Access Level: | acceso abierto |
| Palabra clave: | Spin Accumulation Domain Wall Dynamics Ferromagnetic Semiconductors https://purl.org/becyt/ford/1.3 https://purl.org/becyt/ford/1 https://purl.org/becyt/ford/2.10 https://purl.org/becyt/ford/2 |
| Sumario: | We show experimental evidence of magnetization switching in a single (Ga,Mn)(As,P) semiconducting ferromagnetic layer, attributed to a strong reduction of the magnetization and the anisotropy due to current injection. The nucleation of magnetization reversal is found to occur even in the absence of a magnetic field and to be both anisotropic and stochastic. Our findings highlight a new mechanism of magnetization manipulation based on spin accumulation in a semiconductor material. |
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