Roughening kinetics of chemical vapor deposited copper films on Si(100)
The roughening kinetics of copper films synthesized by low pressure chemical vapor deposition (LPCVD) on Si(100) substrates was investigated by scanning tunneling microscopy (STM). By applying the dynamic scaling theory to the STM images, a steady growth roughness exponent α=0.81±0.05 and a dynamic...
| Autores: | , , , , , |
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| Formato: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 1996 |
| País: | Argentina |
| Recursos: | Universidad Nacional de La Plata |
| Repositorio: | SEDICI (UNLP) |
| Idioma: | inglés |
| OAI Identifier: | oai:sedici.unlp.edu.ar:10915/126508 |
| Acesso em linha: | http://sedici.unlp.edu.ar/handle/10915/126508 |
| Access Level: | acceso abierto |
| Palavra-chave: | Ciencias Exactas Química copper films low pressure chemical vapor deposition scanning tunneling microscopy |
| Resumo: | The roughening kinetics of copper films synthesized by low pressure chemical vapor deposition (LPCVD) on Si(100) substrates was investigated by scanning tunneling microscopy (STM). By applying the dynamic scaling theory to the STM images, a steady growth roughness exponent α=0.81±0.05 and a dynamic growth roughness exponent β=0.62±0.09 were determined. The value of a is consistent with growth model predictions incorporating surface diffusion. The value of β, while higher than expected from these models, can be related to LPCVD processing conditions favoring growth instabilities. |
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