Understanding the parameters affecting the photoluminescence of silicon nanoparticles
Silicon nanoparticles of 1-5 nm size (SiNPs) were synthesized by a bottom-up (BU) approach involving a chemical wet method. The contribution of different emitters to the overall excitation-emission matrix was analyzed on the assumption that pure substances existing in a unique form show an excitatio...
| Autores: | , , , , , , , , |
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| Formato: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2012 |
| País: | Argentina |
| Recursos: | Consejo Nacional de Investigaciones Científicas y Técnicas |
| Repositorio: | CONICET Digital (CONICET) |
| Idioma: | inglés |
| OAI Identifier: | oai:ri.conicet.gov.ar:11336/84414 |
| Acesso em linha: | http://hdl.handle.net/11336/84414 |
| Access Level: | acceso abierto |
| Palavra-chave: | Silicon nanoparticles Photoluminescence https://purl.org/becyt/ford/1.4 https://purl.org/becyt/ford/1 |
| Resumo: | Silicon nanoparticles of 1-5 nm size (SiNPs) were synthesized by a bottom-up (BU) approach involving a chemical wet method. The contribution of different emitters to the overall excitation-emission matrix was analyzed on the assumption that pure substances existing in a unique form show an excitation wavelength-invariant emission spectrum. The occurrence of emitters differing in size and aggregation was supported by transmission electron microscopy (TEM), small-angle X-ray scattering (SAXS), time-resolved single photon counting, and time-resolved anisotropy experiments. The effect on photoluminescence (PL) of the particle surface oxidation as a result of aging is studied and compared to that of surface oxidized particles obtained by a top-down (TD) approach following an electrochemical method with HF etching. Surface oxidation to SiO x seems to introduce two different effects on the SiNP PL. An emission originated in surface states associated to SiO x was identified and observed for SiNPs synthesized by both BU and TD approaches. Blue-shifted excitation-emission spectra associated to a silicon core in embedded SiO x nanostructures were also identified. Theoretical studies were carried out to help understand the observed results. © 2012 American Chemical Society. |
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