Luminescence and electrical properties of single ZnO/MgO core/shell nanowires
To neutralise the influence of the surface of ZnO nanowires for photonics and optoelectronic applications, we have covered them with insulating MgO film and individually contacted them for electrical characterisation. We show that such a metal-insulator-semiconductor-type nanodevice exhibits a high...
| Autores: | , , , , , |
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| Formato: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2014 |
| País: | Argentina |
| Recursos: | Consejo Nacional de Investigaciones Científicas y Técnicas |
| Repositorio: | CONICET Digital (CONICET) |
| Idioma: | inglés |
| OAI Identifier: | oai:ri.conicet.gov.ar:11336/12755 |
| Acesso em linha: | http://hdl.handle.net/11336/12755 |
| Access Level: | acceso abierto |
| Palavra-chave: | ZnO/MgO CORE/SHELL LUMINESCENCE METAL-INSULATOR-SEMICONDUCTOR-TYPE NANODEVICE ELECTRICALLY CONNECTED NANOWIRE https://purl.org/becyt/ford/1.3 https://purl.org/becyt/ford/1 |
| Resumo: | To neutralise the influence of the surface of ZnO nanowires for photonics and optoelectronic applications, we have covered them with insulating MgO film and individually contacted them for electrical characterisation. We show that such a metal-insulator-semiconductor-type nanodevice exhibits a high diode ideality factor of 3.4 below 1 V. MgO shell passivates ZnO surface states and provides confining barriers to electrons and holes within the ZnO core, favouring excitonic ultraviolet radiative recombination, while suppressing defect-related luminescence in the visible and improving electrical conductivity. The results indicate the potential use of ZnO/MgO nanowires as a convenient building block for nano-optoelectronic devices. |
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