An STM and Monte Carlo study of the AlF3 film growth on Cu(111)
We report measurements of AlF3 thin film growth on Cu(1 1 1) at room temperature by means of scanning tunneling microscopy. The growth proceeds by the formation of fractal islands characterized by a very corrugated surface. Through uncovered zones and island density we determined a diffusion length...
| Autores: | , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2015 |
| País: | Argentina |
| Institución: | Consejo Nacional de Investigaciones Científicas y Técnicas |
| Repositorio: | CONICET Digital (CONICET) |
| Idioma: | inglés |
| OAI Identifier: | oai:ri.conicet.gov.ar:11336/4425 |
| Acceso en línea: | http://hdl.handle.net/11336/4425 |
| Access Level: | acceso abierto |
| Palabra clave: | Aluminium Flouride Copper Films Growth Insulator-On-Metal Interfaces Scanning Tunneling Microscopy Monte Carlo Method Diffusion https://purl.org/becyt/ford/1.3 https://purl.org/becyt/ford/1 |
| Sumario: | We report measurements of AlF3 thin film growth on Cu(1 1 1) at room temperature by means of scanning tunneling microscopy. The growth proceeds by the formation of fractal islands characterized by a very corrugated surface. Through uncovered zones and island density we determined a diffusion length of ~25 nm for the adsorbed molecules. Even with this large diffusion length the step-edges do not appear fully decorated. These experimental results are contrasted with simulations based on a limited diffusion aggregation model and Metropolis Monte Carlo. Additionally, the results of the AlF3 sub-monolayer growth on Cu(1 1 1) are compared with our previous results on Cu(1 0 0), finding that both systems show more differences than similarities. Thus, while the growth on Cu(1 0 0) shows fully decorated step-edges, on Cu(1 1 1), they present non-covered zones even at coverages as high as 0.7 monolayers. Supported on MC simulations we suggest that the qualitative difference between both faces is due to different step-edge behaviour. |
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