Effect of doping method on microstructural and defect profile of Sb-BaTiO3
Electrical properties in BaTiO3 based ceramics are strongly dependent on composition and microstructural development. In this work, we studied the effect of the particle coating as doping method on microstructure and electrical properties of Sb-doped BaTiO3. The advanced doping method involved surfa...
| Autores: | , , , , |
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| Tipo de recurso: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2006 |
| País: | Argentina |
| Institución: | Consejo Nacional de Investigaciones Científicas y Técnicas |
| Repositorio: | CONICET Digital (CONICET) |
| Idioma: | inglés |
| OAI Identifier: | oai:ri.conicet.gov.ar:11336/37702 |
| Acceso en línea: | http://hdl.handle.net/11336/37702 |
| Access Level: | acceso abierto |
| Palabra clave: | Batio3 And Titanates Defects Electrical Conductivity Grain Growth Microstructure-Final |
| Sumario: | Electrical properties in BaTiO3 based ceramics are strongly dependent on composition and microstructural development. In this work, we studied the effect of the particle coating as doping method on microstructure and electrical properties of Sb-doped BaTiO3. The advanced doping method involved surface-coated BaTiO3 particles with a thin film of a metal-organic precursor solution. Results were compared with the performance obtained on conventional doping method. The particle coating as doping method led to an effective grain growth inhibition as well as significant microstructure improvement. The incorporation of dopant into the perovskite lattice is influenced by the doping method. Results suggested that Sb acted as donor dopant on A or/and B sites, and also as acceptor on B sites, modifying the grain boundaries structure characteristics. Dopant incorporation method affected the defect structure, and therefore, the donor dopant concentration for the semiconductor insulator transition in BaTiO3 ceramics. |
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