Interfacial effects on the tunneling magnetoresistance in La0.7Sr0.3MnO3/MgO/Fe tunneling junctions

We report on magnetotransport properties on La0.7Sr0.3MnO3/MgO/Fe tunnel junctions grown epitaxially on top of (001)-oriented SrTiO3 substrates by sputtering. It is shown that the magnetoresistive response depends critically on the MgO/Fe interfacial properties. The appearance of an FeOX layer by th...

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Detalhes bibliográficos
Autores: Galceran, R., Balcells, Ll., Martinez Boubeta, C., Bozzo, B., Cisneros Fernández, J., de la Mata, Manuel, Magén, C., Arbiol, J., Tornos, J., Cuellar, F. A., Sefrioui, Z., Cebollada, A., Golmar, Federico, Hueso, Luis E., Casanova, F., Santamaría, J., Martinez, B.
Formato: artículo
Estado:Versión publicada
Fecha de publicación:2015
País:Argentina
Recursos:Consejo Nacional de Investigaciones Científicas y Técnicas
Repositorio:CONICET Digital (CONICET)
Idioma:inglés
OAI Identifier:oai:ri.conicet.gov.ar:11336/42846
Acesso em linha:http://hdl.handle.net/11336/42846
Access Level:acceso abierto
Palavra-chave:Tunneling Magnetoresistance
https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
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oai_identifier_str oai:ri.conicet.gov.ar:11336/42846
network_acronym_str AR
network_name_str Argentina
repository_id_str
dc.title.none.fl_str_mv Interfacial effects on the tunneling magnetoresistance in La0.7Sr0.3MnO3/MgO/Fe tunneling junctions
title Interfacial effects on the tunneling magnetoresistance in La0.7Sr0.3MnO3/MgO/Fe tunneling junctions
spellingShingle Interfacial effects on the tunneling magnetoresistance in La0.7Sr0.3MnO3/MgO/Fe tunneling junctions
Galceran, R.
Tunneling Magnetoresistance
https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
title_short Interfacial effects on the tunneling magnetoresistance in La0.7Sr0.3MnO3/MgO/Fe tunneling junctions
title_full Interfacial effects on the tunneling magnetoresistance in La0.7Sr0.3MnO3/MgO/Fe tunneling junctions
title_fullStr Interfacial effects on the tunneling magnetoresistance in La0.7Sr0.3MnO3/MgO/Fe tunneling junctions
title_full_unstemmed Interfacial effects on the tunneling magnetoresistance in La0.7Sr0.3MnO3/MgO/Fe tunneling junctions
title_sort Interfacial effects on the tunneling magnetoresistance in La0.7Sr0.3MnO3/MgO/Fe tunneling junctions
dc.creator.none.fl_str_mv Galceran, R.
Balcells, Ll.
Martinez Boubeta, C.
Bozzo, B.
Cisneros Fernández, J.
de la Mata, Manuel
Magén, C.
Arbiol, J.
Tornos, J.
Cuellar, F. A.
Sefrioui, Z.
Cebollada, A.
Golmar, Federico
Hueso, Luis E.
Casanova, F.
Santamaría, J.
Martinez, B.
author Galceran, R.
author_facet Galceran, R.
Balcells, Ll.
Martinez Boubeta, C.
Bozzo, B.
Cisneros Fernández, J.
de la Mata, Manuel
Magén, C.
Arbiol, J.
Tornos, J.
Cuellar, F. A.
Sefrioui, Z.
Cebollada, A.
Golmar, Federico
Hueso, Luis E.
Casanova, F.
Santamaría, J.
Martinez, B.
author_role author
author2 Balcells, Ll.
Martinez Boubeta, C.
Bozzo, B.
Cisneros Fernández, J.
de la Mata, Manuel
Magén, C.
Arbiol, J.
Tornos, J.
Cuellar, F. A.
Sefrioui, Z.
Cebollada, A.
Golmar, Federico
Hueso, Luis E.
Casanova, F.
Santamaría, J.
Martinez, B.
author2_role author
author
author
author
author
author
author
author
author
author
author
author
author
author
author
author
dc.subject.none.fl_str_mv Tunneling Magnetoresistance
https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
topic Tunneling Magnetoresistance
https://purl.org/becyt/ford/1.3
https://purl.org/becyt/ford/1
description We report on magnetotransport properties on La0.7Sr0.3MnO3/MgO/Fe tunnel junctions grown epitaxially on top of (001)-oriented SrTiO3 substrates by sputtering. It is shown that the magnetoresistive response depends critically on the MgO/Fe interfacial properties. The appearance of an FeOX layer by the interface destroys the DELTA1 symmetry filtering effect of the MgO/Fe system and only a small negative tunneling magnetoresistance (TMR) (∼ −3%) is measured. However, in annealed samples a switchover from positive TMR (∼ +25% at 70 K) to negative TMR (∼ −1%) is observed around 120 K. This change is associated with the transition from semiconducting at high T to insulating at low T taking place at the Verwey transition (TV ∼ 120 K) in Fe3O4, thus suggesting the formation of a very thin slab of magnetite at the MgO/Fe interface during annealing treatments.These results highlight the relevance of interfacial properties on the tunneling conduction process and how it can be substantially modified through appropriate interface engineering.
publishDate 2015
dc.date.none.fl_str_mv 2015-09
dc.type.none.fl_str_mv info:eu-repo/semantics/article
info:eu-repo/semantics/publishedVersion
http://purl.org/coar/resource_type/c_6501
info:ar-repo/semantics/articulo
format article
status_str publishedVersion
dc.identifier.none.fl_str_mv http://hdl.handle.net/11336/42846
Galceran, R.; Balcells, Ll.; Martinez Boubeta, C.; Bozzo, B.; Cisneros Fernández, J.; et al.; Interfacial effects on the tunneling magnetoresistance in La0.7Sr0.3MnO3/MgO/Fe tunneling junctions; American Physical Society; Physical Review B: Condensed Matter and Materials Physics; 92; 9-2015; 94428-94428
1098-0121
CONICET Digital
CONICET
url http://hdl.handle.net/11336/42846
identifier_str_mv Galceran, R.; Balcells, Ll.; Martinez Boubeta, C.; Bozzo, B.; Cisneros Fernández, J.; et al.; Interfacial effects on the tunneling magnetoresistance in La0.7Sr0.3MnO3/MgO/Fe tunneling junctions; American Physical Society; Physical Review B: Condensed Matter and Materials Physics; 92; 9-2015; 94428-94428
1098-0121
CONICET Digital
CONICET
dc.language.none.fl_str_mv eng
language eng
dc.relation.none.fl_str_mv info:eu-repo/semantics/altIdentifier/doi/10.1103/PhysRevB.92.094428
info:eu-repo/semantics/altIdentifier/url/https://journals.aps.org/prb/abstract/10.1103/PhysRevB.92.094428
dc.rights.none.fl_str_mv info:eu-repo/semantics/openAccess
https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
eu_rights_str_mv openAccess
rights_invalid_str_mv https://creativecommons.org/licenses/by-nc-sa/2.5/ar/
dc.format.none.fl_str_mv application/pdf
application/pdf
dc.publisher.none.fl_str_mv American Physical Society
publisher.none.fl_str_mv American Physical Society
dc.source.none.fl_str_mv reponame:CONICET Digital (CONICET)
instname:Consejo Nacional de Investigaciones Científicas y Técnicas
instname_str Consejo Nacional de Investigaciones Científicas y Técnicas
reponame_str CONICET Digital (CONICET)
collection CONICET Digital (CONICET)
repository.name.fl_str_mv CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicas
repository.mail.fl_str_mv dasensio@conicet.gov.ar; lcarlino@conicet.gov.ar
_version_ 1799196209411260416
spelling Interfacial effects on the tunneling magnetoresistance in La0.7Sr0.3MnO3/MgO/Fe tunneling junctionsGalceran, R.Balcells, Ll.Martinez Boubeta, C.Bozzo, B.Cisneros Fernández, J.de la Mata, ManuelMagén, C.Arbiol, J.Tornos, J.Cuellar, F. A.Sefrioui, Z.Cebollada, A.Golmar, FedericoHueso, Luis E.Casanova, F.Santamaría, J.Martinez, B.Tunneling Magnetoresistancehttps://purl.org/becyt/ford/1.3https://purl.org/becyt/ford/1We report on magnetotransport properties on La0.7Sr0.3MnO3/MgO/Fe tunnel junctions grown epitaxially on top of (001)-oriented SrTiO3 substrates by sputtering. It is shown that the magnetoresistive response depends critically on the MgO/Fe interfacial properties. The appearance of an FeOX layer by the interface destroys the DELTA1 symmetry filtering effect of the MgO/Fe system and only a small negative tunneling magnetoresistance (TMR) (∼ −3%) is measured. However, in annealed samples a switchover from positive TMR (∼ +25% at 70 K) to negative TMR (∼ −1%) is observed around 120 K. This change is associated with the transition from semiconducting at high T to insulating at low T taking place at the Verwey transition (TV ∼ 120 K) in Fe3O4, thus suggesting the formation of a very thin slab of magnetite at the MgO/Fe interface during annealing treatments.These results highlight the relevance of interfacial properties on the tunneling conduction process and how it can be substantially modified through appropriate interface engineering.Fil: Galceran, R.. Consejo Superior de Investigaciones Científicas. Instituto de Ciencia de los Materiales de Barcelona; EspañaFil: Balcells, Ll.. Consejo Superior de Investigaciones Científicas. Instituto de Ciencia de los Materiales de Barcelona; EspañaFil: Martinez Boubeta, C.. Universidad de Barcelona; EspañaFil: Bozzo, B.. Consejo Superior de Investigaciones Científicas. Instituto de Ciencia de los Materiales de Barcelona; EspañaFil: Cisneros Fernández, J.. Consejo Superior de Investigaciones Científicas. Instituto de Ciencia de los Materiales de Barcelona; EspañaFil: de la Mata, Manuel. Consejo Superior de Investigaciones Científicas. Instituto de Ciencia de los Materiales de Barcelona; EspañaFil: Magén, C.. Universidad de Zaragoza; EspañaFil: Arbiol, J.. Consejo Superior de Investigaciones Científicas. Instituto de Ciencia de los Materiales de Barcelona; España. Institució Catalana de Recerca i Estudis Avancats; EspañaFil: Tornos, J.. Universidad Complutense de Madrid; EspañaFil: Cuellar, F. A.. Universidad Complutense de Madrid; EspañaFil: Sefrioui, Z.. Universidad Complutense de Madrid; EspañaFil: Cebollada, A.. Instituto de Microelectrónica de Madrid; España. Consejo Superior de Investigaciones Científicas; EspañaFil: Golmar, Federico. Universidad Nacional de San Martín. Escuela de Ciencia y Tecnología; Argentina. Consejo Nacional de Investigaciones Científicas y Técnicas; ArgentinaFil: Hueso, Luis E.. Fundación Vasca para la Ciencia; España. CIC nanoGUNE; EspañaFil: Casanova, F.. Fundación Vasca para la Ciencia; España. CIC nanoGUNE; EspañaFil: Santamaría, J.. Universidad Complutense de Madrid; EspañaFil: Martinez, B.. Consejo Superior de Investigaciones Científicas. Instituto de Ciencia de los Materiales de Barcelona; EspañaAmerican Physical Society2015-09info:eu-repo/semantics/articleinfo:eu-repo/semantics/publishedVersionhttp://purl.org/coar/resource_type/c_6501info:ar-repo/semantics/articuloapplication/pdfapplication/pdfhttp://hdl.handle.net/11336/42846Galceran, R.; Balcells, Ll.; Martinez Boubeta, C.; Bozzo, B.; Cisneros Fernández, J.; et al.; Interfacial effects on the tunneling magnetoresistance in La0.7Sr0.3MnO3/MgO/Fe tunneling junctions; American Physical Society; Physical Review B: Condensed Matter and Materials Physics; 92; 9-2015; 94428-944281098-0121CONICET DigitalCONICETenginfo:eu-repo/semantics/altIdentifier/doi/10.1103/PhysRevB.92.094428info:eu-repo/semantics/altIdentifier/url/https://journals.aps.org/prb/abstract/10.1103/PhysRevB.92.094428info:eu-repo/semantics/openAccesshttps://creativecommons.org/licenses/by-nc-sa/2.5/ar/reponame:CONICET Digital (CONICET)instname:Consejo Nacional de Investigaciones Científicas y Técnicas2024-05-08T14:18:52Zoai:ri.conicet.gov.ar:11336/42846instacron:CONICETInstitucionalhttp://ri.conicet.gov.ar/Organismo científico-tecnológicoNo correspondehttp://ri.conicet.gov.ar/oai/requestdasensio@conicet.gov.ar; lcarlino@conicet.gov.arArgentinaNo correspondeNo correspondeNo correspondeopendoar:34982024-05-08 14:18:53.15CONICET Digital (CONICET) - Consejo Nacional de Investigaciones Científicas y Técnicasfalse
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