Partial preservation of chiral symmetry and colossal magnetoresistance in adatom-doped graphene
We analyze the electronic properties of adatom-doped graphene in the low-impurity-concentration regime. We focus on the Anderson localized regime and calculate the localization length ξ as a function of the electron doping and an external magnetic field. The impurity states hybridize with carbon...
| Autores: | , , |
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| Formato: | artículo |
| Estado: | Versión publicada |
| Fecha de publicación: | 2014 |
| País: | Argentina |
| Recursos: | Consejo Nacional de Investigaciones Científicas y Técnicas |
| Repositorio: | CONICET Digital (CONICET) |
| Idioma: | inglés |
| OAI Identifier: | oai:ri.conicet.gov.ar:11336/27547 |
| Acesso em linha: | http://hdl.handle.net/11336/27547 |
| Access Level: | acceso abierto |
| Palavra-chave: | Graphene Disorder Transport Impurities https://purl.org/becyt/ford/1.3 https://purl.org/becyt/ford/1 |
| Resumo: | We analyze the electronic properties of adatom-doped graphene in the low-impurity-concentration regime. We focus on the Anderson localized regime and calculate the localization length ξ as a function of the electron doping and an external magnetic field. The impurity states hybridize with carbon's pz states and form a partially filled band close to the Dirac point. Near the impurity band center, the chiral symmetry of the system's effective Hamiltonian is partially preserved, which leads to a large enhancement of ξ. The sensitivity of transport properties, namely, Mott's variable range hopping scale T0, to an external magnetic field perpendicular to the graphene sheet leads to a colossal magnetoresistance effect, as observed in recent experiments. |
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