Cita APA

Díaz-Reyes, J., Galván-Arellano, M., Mendoza-Alvarez, J., Arias-Cerón, J., Herrera-Pérez, J., & López-Cruz, E. (2017). Characterization of highly doped Ga$_{0.86}$ In$_{0.14}$As$_{0.13}$Sb$_{0.87}$ grown by liquid phase epitaxy.

Citación estilo Chicago

Díaz-Reyes, J., M. Galván-Arellano, J.G Mendoza-Alvarez, J.S Arias-Cerón, J.L Herrera-Pérez, y E. López-Cruz. Characterization of Highly Doped Ga$_{0.86}$ In$_{0.14}$As$_{0.13}$Sb$_{0.87}$ Grown By Liquid Phase Epitaxy. 2017.

Cita MLA

Díaz-Reyes, J., et al. Characterization of Highly Doped Ga$_{0.86}$ In$_{0.14}$As$_{0.13}$Sb$_{0.87}$ Grown By Liquid Phase Epitaxy. 2017.