López Gayou, V. (2012). FTIR and electrical characterization of a-Si: H layers deposited by PECVD at different boron ratios.
Citación estilo ChicagoLópez Gayou, Valentín. FTIR and Electrical Characterization of A-Si: H Layers Deposited By PECVD At Different Boron Ratios. 2012.
Cita MLALópez Gayou, Valentín. FTIR and Electrical Characterization of A-Si: H Layers Deposited By PECVD At Different Boron Ratios. 2012.
Precaución: Estas citas no son 100% exactas.