Electronic structure and Fermi surface of Bi(100)

The surface electronic structure of Bi(100) was studied by angle-resolved photoemission and the full-potential linearized-augmented plane-wave film method. Experimentally, several electronic surface states were identified in the gaps of the projected-bulk band structure close to the Fermi level. The...

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Detalhes bibliográficos
Autores: Hofmann, Ph., Gayone, J. E., Bihlmayer, Gustav, Koroteev, Yuri M., Chulkov, Eugene V.
Formato: artículo
Estado:Versión publicada
Fecha de publicación:2005
País:España
Recursos:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/224587
Acesso em linha:http://hdl.handle.net/10261/224587
Access Level:acceso abierto
Palavra-chave:ddc:530
Descrição
Resumo:The surface electronic structure of Bi(100) was studied by angle-resolved photoemission and the full-potential linearized-augmented plane-wave film method. Experimentally, several electronic surface states were identified in the gaps of the projected-bulk band structure close to the Fermi level. Theory shows that these states belong to a spin-orbit split-surface band that extends through the whole Brillouin zone, and that some surface states penetrate very deeply into the bulk. In the experiment, the surface Fermi surface was found to consist of three features: an electron pocket at the ¯Γ point, a hole pocket in the ¯Γ−¯M direction (i.e., in the direction of the surface-mirror line), and a small Fermi-surface element close to the ¯M′ points.