Martil De La Plaza, I., González Díaz, G., & Prado Millán, Á. D. (2001). Molecular models and activation energies for bonding rearrangement in plasma-deposited alpha-SiNx: H dielectric thin films treated by rapid thermal annealing.
Citação norma ChicagoMartil De La Plaza, Ignacio, Germán González Díaz, y Álvaro Del Prado Millán. Molecular Models and Activation Energies for Bonding Rearrangement in Plasma-deposited Alpha-SiNx: H Dielectric Thin Films Treated By Rapid Thermal Annealing. 2001.
Citação norma MLAMartil De La Plaza, Ignacio, Germán González Díaz, y Álvaro Del Prado Millán. Molecular Models and Activation Energies for Bonding Rearrangement in Plasma-deposited Alpha-SiNx: H Dielectric Thin Films Treated By Rapid Thermal Annealing. 2001.