Cita APA

Borghello, G., Lerario, E., Faccio, F., Koch, H., Termo, G., Michelis, S., . . . Muñoz Chavero, F. (2021). Ionizing radiation damage in 65 nm CMOS technology: Influence of geometry, bias and temperature at ultra-high doses.

Citación estilo Chicago

Borghello, G., E. Lerario, F. Faccio, H.D Koch, G. Termo, S. Michelis, F.J Márquez Lasso, Rogelio Palomo Pinto, y Fernando Muñoz Chavero. Ionizing Radiation Damage in 65 Nm CMOS Technology: Influence of Geometry, Bias and Temperature At Ultra-high Doses. 2021.

Cita MLA

Borghello, G., et al. Ionizing Radiation Damage in 65 Nm CMOS Technology: Influence of Geometry, Bias and Temperature At Ultra-high Doses. 2021.