Cita APA

Zhang, Z., Cardoso, S., Freitas, P. P., Batlle Gelabert, X., Wei, P., Barradas, N., & Soares, J. C. (2001). 40% tunneling magnetoresistance after anneal at 380°C for tunnel junctions with iron¿oxide interface layers.

Citación estilo Chicago

Zhang, Zongzhi, Susana Cardoso, P. P. Freitas, Xavier Batlle Gelabert, Peng Wei, N. Barradas, y J. C. Soares. 40% Tunneling Magnetoresistance After Anneal At 380°C for Tunnel Junctions With Iron¿oxide Interface Layers. 2001.

Cita MLA

Zhang, Zongzhi, et al. 40% Tunneling Magnetoresistance After Anneal At 380°C for Tunnel Junctions With Iron¿oxide Interface Layers. 2001.