Cita APA

Rafí, J. M., & Campabadal, F. (2001). Hot-carrier degradation in deep-submicrometer nMOSFETs: Lightly doped drain vs. large angle tilt implanted drain.

Citación estilo Chicago

Rafí, Joan Marc, y Francesca Campabadal. Hot-carrier Degradation in Deep-submicrometer NMOSFETs: Lightly Doped Drain Vs. Large Angle Tilt Implanted Drain. 2001.

Cita MLA

Rafí, Joan Marc, y Francesca Campabadal. Hot-carrier Degradation in Deep-submicrometer NMOSFETs: Lightly Doped Drain Vs. Large Angle Tilt Implanted Drain. 2001.

Precaución: Estas citas no son 100% exactas.