Scale-Dependent Growth Modes of Selective Area Grown III-V Nanowires
Due to their flexible geometry, in-plane selective area grown (SAG) nanowires (NWs) encompass the advantages of vapor-liquid-solid NWs and planar structures. The complex interplay of growth kinetics and NW dimensions provides new pathways for crystal engineering; however, their growth mechanisms rem...
| Authors: | , , , , , |
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| Format: | article |
| Publication Date: | 2024 |
| Country: | España |
| Institution: | Universitat Autònoma de Barcelona |
| Repository: | Dipòsit Digital de Documents de la UAB |
| Language: | English |
| OAI Identifier: | oai:ddd.uab.cat:308866 |
| Online Access: | https://ddd.uab.cat/record/308866 https://dx.doi.org/urn:doi:10.1021/acs.nanolett.4c03283 |
| Access Level: | Open access |
| Keyword: | Selective area growth Molecular beam epitaxy Growth modes GaAs(Sb) InGaAs Diffusion length |
| Summary: | Due to their flexible geometry, in-plane selective area grown (SAG) nanowires (NWs) encompass the advantages of vapor-liquid-solid NWs and planar structures. The complex interplay of growth kinetics and NW dimensions provides new pathways for crystal engineering; however, their growth mechanisms remain poorly understood. We analyze the growth mechanisms of GaAs(Sb) and InGaAs/GaAs(Sb) in-plane SAG NWs using molecular beam epitaxy (MBE). While GaAs(Sb) NWs consistently follow a layer-by-layer growth, the InGaAs/GaAs(Sb) growth transitions from step-flow to layer-by-layer and layer-plus-island depending on the InGaAs thickness and the NW dimensions. We extract the diffusion lengths of Ga adatoms along the [11̅0] and [110] directions under As during GaAs(Sb) growth. Our results indicate that Sb may inhibit the layer-by-layer to step-flow transition. Our findings show that different growth modes can be achieved in the MBE of in-plane SAG NWs grown on the same substrate and highlight the importance of the interplay with NW dimensions. |
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