Cita APA

Orfao, B., García Vasallo, B., Moro-Melgar, D., Zaknoune, M., Gioia, G. D., Samnouni, M., . . . Mateos López, J. (2021). Technological Parameters and Edge Fringing Capacitance in GaN Schottky Barrier Diodes: Monte Carlo Simulations.

Citación estilo Chicago

Orfao, Beatriz, Beatriz García Vasallo, Diego Moro-Melgar, M. Zaknoune, G. Di Gioia, M. Samnouni, María Susana Pérez Santos, Tomás González Sánchez, y Javier Mateos López. Technological Parameters and Edge Fringing Capacitance in GaN Schottky Barrier Diodes: Monte Carlo Simulations. 2021.

Cita MLA

Orfao, Beatriz, et al. Technological Parameters and Edge Fringing Capacitance in GaN Schottky Barrier Diodes: Monte Carlo Simulations. 2021.