Cita APA

Santos Tejido, I., Castrillo, P., Windl, W., Drabold, D. A., Pelaz Montes, M. L., & Marqués Cuesta, L. A. (2010). Self-trapping in B-doped amorphous Si: Intrinsic origin of low acceptor efficiency.

Citación estilo Chicago

Santos Tejido, Iván, P. Castrillo, W. Windl, D. A. Drabold, María Lourdes Pelaz Montes, y Luis Alberto Marqués Cuesta. Self-trapping in B-doped Amorphous Si: Intrinsic Origin of Low Acceptor Efficiency. 2010.

Cita MLA

Santos Tejido, Iván, et al. Self-trapping in B-doped Amorphous Si: Intrinsic Origin of Low Acceptor Efficiency. 2010.