Cita APA

Peiró Martínez, F., Cornet i Calveras, A., Morante i Lleonart, J. R., Beck, M., & Py, M. A. (1998). Surface roughness in InGaAs Channels of HEMT devices depending on the growth temperature: Strain induced or due to alloy decomposition.

Citación estilo Chicago

Peiró Martínez, Francisca, Albert Cornet i Calveras, Joan Ramon Morante i Lleonart, M. Beck, y M. A. Py. Surface Roughness in InGaAs Channels of HEMT Devices Depending On the Growth Temperature: Strain Induced or Due to Alloy Decomposition. 1998.

Cita MLA

Peiró Martínez, Francisca, et al. Surface Roughness in InGaAs Channels of HEMT Devices Depending On the Growth Temperature: Strain Induced or Due to Alloy Decomposition. 1998.