Cita APA

Seoane Iglesias, N., Martinez, A., Brown, A. R., Barker, J. R., & Asenov, A. (2009). Current Variability in Si Nanowire MOSFETs Due to Random Dopants in the Source/Drain Regions: A Fully 3-D NEGF Simulation Study.

Citación estilo Chicago

Seoane Iglesias, Natalia, Antonio Martinez, Andrew R. Brown, John R. Barker, y Asen Asenov. Current Variability in Si Nanowire MOSFETs Due to Random Dopants in the Source/Drain Regions: A Fully 3-D NEGF Simulation Study. 2009.

Cita MLA

Seoane Iglesias, Natalia, et al. Current Variability in Si Nanowire MOSFETs Due to Random Dopants in the Source/Drain Regions: A Fully 3-D NEGF Simulation Study. 2009.