Sergio, G. S., Íñiguez de la Torre Mulas, I., Mateos López, J., & González Sánchez, T. (2025). Electrothermal modeling of GaN high electron mobility transistors using a Monte Carlo-trained hybrid AI-thermal approach with microscopic physical insight.
Citación estilo ChicagoSergio, García Sánchez, Ignacio Íñiguez de la Torre Mulas, Javier Mateos López, y Tomás González Sánchez. Electrothermal Modeling of GaN High Electron Mobility Transistors Using a Monte Carlo-trained Hybrid AI-thermal Approach With Microscopic Physical Insight. 2025.
Cita MLASergio, García Sánchez, Ignacio Íñiguez de la Torre Mulas, Javier Mateos López, y Tomás González Sánchez. Electrothermal Modeling of GaN High Electron Mobility Transistors Using a Monte Carlo-trained Hybrid AI-thermal Approach With Microscopic Physical Insight. 2025.