Valdivieso León, C. (2025). Characterization of degradation induced by BTI, HCI, and OFF-State Stress, and of the Resistive Switching phenomenon in FD-SOI Ω-Gate NW-FET devices. Analysis of aging relaxation in ring oscillator circuits fabricated in 28 nm technology.
Citação norma ChicagoValdivieso León, Carlos-Andrés. Characterization of Degradation Induced By BTI, HCI, and OFF-State Stress, and of the Resistive Switching Phenomenon in FD-SOI Ω-Gate NW-FET Devices. Analysis of Aging Relaxation in Ring Oscillator Circuits Fabricated in 28 Nm Technology. 2025.
Citação norma MLAValdivieso León, Carlos-Andrés. Characterization of Degradation Induced By BTI, HCI, and OFF-State Stress, and of the Resistive Switching Phenomenon in FD-SOI Ω-Gate NW-FET Devices. Analysis of Aging Relaxation in Ring Oscillator Circuits Fabricated in 28 Nm Technology. 2025.