Electronic structure of boron doped diamond: An x-ray spectroscopic study
The valence and conduction band electronic structure of boron-doped diamond has been measured using soft x-ray emission and absorption spectroscopy. The experimental results reveal p-type doping in the diamond film through the appearance of states in the band-gap. Structure distortion was observed a...
| Autores: | , , , , , , , |
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| Formato: | artículo |
| Fecha de publicación: | 2013 |
| País: | España |
| Recursos: | Consejo Superior de Investigaciones Científicas (CSIC) |
| Repositorio: | DIGITAL.CSIC. Repositorio Institucional del CSIC |
| OAI Identifier: | oai:digital.csic.es:10261/88296 |
| Acesso em linha: | http://hdl.handle.net/10261/88296 |
| Access Level: | acceso abierto |
| Palavra-chave: | Diamond Doping Elemental semiconductors Boron X-ray spectroscopy |
| Resumo: | The valence and conduction band electronic structure of boron-doped diamond has been measured using soft x-ray emission and absorption spectroscopy. The experimental results reveal p-type doping in the diamond film through the appearance of states in the band-gap. Structure distortion was observed around the doping center, while the long range order of the diamond structure remains. A chemically shifted C 1s level explains why one of the absorption features seems to appear below the valence band maximum. An excitonic feature was observed in the boron-doped diamond, similar to that observed in pure diamond, indicating that the exciton binding energy remains the same upon B-doping. © 2013 AIP Publishing LLC. |
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