Preparation of ZnO-SnO2 ceramic materials by a coprecipitation method

[EN] Tin (IV)-doped zinc oxide ceramics find its main application as specific gas sensor devices. The sensor ability of the mixture and its particular affinity for a particular gas (selectivity) depends both on the crystalline phases in the microstructure of the sintered semiconductor and on the deg...

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Detalles Bibliográficos
Autores: Peiteado, Marco, Iglesias Vega, Yolanda, Frutos, José de, Fernández Lozano, José Francisco, Caballero Cuesta, Amador
Tipo de recurso: artículo
Fecha de publicación:2006
País:España
Institución:Consejo Superior de Investigaciones Científicas (CSIC)
Repositorio:DIGITAL.CSIC. Repositorio Institucional del CSIC
OAI Identifier:oai:digital.csic.es:10261/4117
Acceso en línea:http://hdl.handle.net/10261/4117
Access Level:acceso abierto
Palabra clave:Doping
Microstructure
Semiconductor
ZnO
Dopante
Microestructura
Descripción
Sumario:[EN] Tin (IV)-doped zinc oxide ceramics find its main application as specific gas sensor devices. The sensor ability of the mixture and its particular affinity for a particular gas (selectivity) depends both on the crystalline phases in the microstructure of the sintered semiconductor and on the degree of tin incorporation into ZnO lattice. By means of a highly reactive coprecipitation method it is revealed that the range of solid solution of tin in zinc oxide stays below 0.1 mol % of SnO2 since higher concentrations lead to segregation of a secondary Zn2SnO4 spinel type-phase.